Formation and electrical bistability properties of ZnO nanoparticles embedded in polyimide nanocomposites sandwiched between two C-60 layers
- Authors
- Li, Fushan; Kim, Tae Whan; Dong, Wenguo; Kim, Young-Ho
- Issue Date
- Jan-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.1, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 1
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172177
- DOI
- 10.1063/1.2830617
- ISSN
- 0003-6951
- Abstract
- The electrical bistability of the memory device based on ZnO nanoparticles embedded in a polyimide (PI) layer was investigated. Transmission electron microscopy and selected area electron diffraction pattern measurements showed that ZnO nanocrystals were formed inside the PI layer. Current-voltage measurements on Al/C-60/ZnO nanoparticles embedded in PI layer/C-60/indium tin oxide structures at 300 K showed a current bistability with a large on/off ratio of 10(4). The current-voltage hysteresis characteristics at negative voltages could be modified by varying the applied positive erasing voltage. The memory device fabricated utilizing ZnO nanoparticles embedded in a PI layer exhibited excellent environmental stability at ambient conditions.
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