Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films
- Authors
- Chung, KB; Cho, MH; Hwang, U; Kang, HJ; Suh, DC; Sohn, HC; Ko, DH; Kim, SH; Jeon, Hyeongtag
- Issue Date
- Jan-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.2, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 2
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172182
- DOI
- 10.1063/1.2826271
- ISSN
- 0003-6951
- Abstract
- The effects of film composition and postnitridation annealing on band gap and valence band offset were examined in nitrided Hf-silicate films prepared using direct plasma nitridation. Regardless of the composition of Hf-silicate films, the band gap characteristics were similar after direct plasma nitridation (4.5 +/- 0.1 eV) and postnitridation annealing (5.6 +/- 0.1 eV). The decrease in band gap after direct plasma nitridation was caused by the formation of Si-N and Hf-N bonds, while the recovery of band gap by postnitridation annealing was influenced by the dissociation of unstable Hf-N bonds. The difference in valence band offset was strongly related to the chemical states of Si-N bonds.
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