Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

Abstract

The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20 nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.