Memory effect of nonvolatile bistable devices based on CdSe/ZnS nanoparticles sandwiched between C-60 layers
- Authors
- Li, Fushan; Son, Dong-Ick; Ham, Jung-Hun; Kim, Bong-Jun; Jung, Jae Hun; Kim, Tae Whan
- Issue Date
- Oct-2007
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.91, no.16, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 91
- Number
- 16
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172232
- DOI
- 10.1063/1.2801357
- ISSN
- 0003-6951
- Abstract
- Current-voltage and conductance-voltage (G-V) measurements on three-layer Al/C-60/CdSe nanoparticles/C-60/indium tin oxide (ITO) structures fabricated by using a spin-coating method showed a nonvolatile electrical bistable behavior. Capacitance-voltage (C-V) measurements on Al/C-60/CdSe nanoparticles/C-60/ITO structures showed a clockwise hysteresis with a flatband voltage shift due to the existence of the CdSe nanoparticles, indicative of memory effects in the devices. Current-time measurements showed that the devices exhibited excellent memory retention ability at ambient conditions. Possible operating mechanisms for the memory effects in the Al/C-60/CdSe nanoparticles/C-60/ITO devices are described on the basis of the G-V and the C-V results.
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