Formation of gold nanoparticles embedded in a polyimide film for nanofloating gate memory
- Authors
- Kim, Jung H.; Baek, Kwang H.; Kim, Chang Kyung; Kim, Young Bae; Yoon, Chong Seung
- Issue Date
- Mar-2007
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.90, no.12, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 90
- Number
- 12
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172329
- DOI
- 10.1063/1.2716345
- ISSN
- 0003-6951
- Abstract
- A monolayer of vertically aligned Au nanoparticles embedded in a dielectric film was fabricated by sandwiching a 3.4-nm-thick Au film between two polyimide (PI) precursor layers. Au formed uniform-sized nanoparticles on the PI precursor and coalesced into 10 nm sized nanoparticles during imidization, forming a well-dispersed monolayer of Au nanoparticles embedded in PI. Capacitance-voltage measurement at 300 K showed that the monolayer of Au nanoparticles functioning as a floating gate in Al/PI/Au nanoparticles/PI/Si metal-insulator-semiconductor-type capacitor exhibited a capacitance hysteresis of 3.4 V at an applied voltage of 6 V. The memory effect can be potentially utilized in next generation flash memories.
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