Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers
DC Field | Value | Language |
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dc.contributor.author | Khan, Sobia Ali | - |
dc.contributor.author | Hussain, Fayyaz | - |
dc.contributor.author | Chung, Daewon | - |
dc.contributor.author | Rahmani, Mehr Khalid | - |
dc.contributor.author | Ismail, Muhammd | - |
dc.contributor.author | Mahata, Chandreswar | - |
dc.contributor.author | Abbas, Yawar | - |
dc.contributor.author | Abbas, Haider | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Mikhaylov, Alexey N. | - |
dc.contributor.author | Shchanikov, Sergey A. | - |
dc.contributor.author | Yang, Byung-Do | - |
dc.contributor.author | Kim, Sungjun | - |
dc.date.accessioned | 2022-10-25T07:37:58Z | - |
dc.date.available | 2022-10-25T07:37:58Z | - |
dc.date.created | 2022-10-06 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172545 | - |
dc.description.abstract | In this paper, we demonstrate a device using a Ni/SiN/BN/p(+)-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p(+)-Si and Ni/BN/p(+)-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.3390/mi13091498 | - |
dc.identifier.scopusid | 2-s2.0-85138688363 | - |
dc.identifier.wosid | 000856855800001 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.13, no.9, pp.1 - 10 | - |
dc.relation.isPartOf | MICROMACHINES | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 13 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordAuthor | boron nitride | - |
dc.subject.keywordAuthor | self-rectification | - |
dc.identifier.url | https://www.mdpi.com/2072-666X/13/9/1498 | - |
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