Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layersopen access
- Authors
- Khan, Sobia Ali; Hussain, Fayyaz; Chung, Daewon; Rahmani, Mehr Khalid; Ismail, Muhammd; Mahata, Chandreswar; Abbas, Yawar; Abbas, Haider; Choi, Changhwan; Mikhaylov, Alexey N.; Shchanikov, Sergey A.; Yang, Byung-Do; Kim, Sungjun
- Issue Date
- Sep-2022
- Publisher
- MDPI
- Keywords
- resistive switching; silicon nitride; boron nitride; self-rectification
- Citation
- MICROMACHINES, v.13, no.9, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROMACHINES
- Volume
- 13
- Number
- 9
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172545
- DOI
- 10.3390/mi13091498
- ISSN
- 2072-666X
- Abstract
- In this paper, we demonstrate a device using a Ni/SiN/BN/p(+)-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p(+)-Si and Ni/BN/p(+)-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.
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