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Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates

Authors
Kim, Young MinRoh, Hee-RaKim, SungtaeKim, Young-Ho
Issue Date
Dec-2010
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Cu-Zn alloy; intermetallic compound; microvoids; kinetics; activation energy
Citation
Journal of Electronic Materials, v.39, no.12, pp 2504 - 2512
Pages
9
Indexed
SCI
SCIE
SCOPUS
Journal Title
Journal of Electronic Materials
Volume
39
Number
12
Start Page
2504
End Page
2512
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173373
DOI
10.1007/s11664-010-1379-x
ISSN
0361-5235
1543-186X
Abstract
The growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu6Sn5 formed after soldering by dipping Cu or Cu-10 wt.%Zn wires into the molten solder at 260A degrees C. Isothermal aging was performed at 120A degrees C, 150A degrees C, and 180A degrees C for up to 2000 h. During the aging process, the morphology of Cu6Sn5 changed to a planar type in both specimens. Typical bilayer of Cu6Sn5 and Cu3Sn and numerous microvoids were formed at the SAC/Cu interfaces after aging, while Cu3Sn and microvoids were not observed at the SAC/Cu-Zn interfaces. IMC growth on the Cu substrate was controlled by volume diffusion in all conditions. In contrast, IMC growth on Cu-Zn specimens was controlled by interfacial reaction for a short aging time and volume diffusion kinetics for a long aging time. The growth rate of IMCs on Cu-Zn substrates was much slower due to the larger activation energy and the lower layer growth coefficient for the growth of Cu-Sn IMCs. This effect was more prominent at higher aging temperatures.
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