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Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film

Authors
Jung, KyoohoKim, YongminJung, WoongIm, HyunsikPark, BaehoHong, JinpyoLee, JiyeongPark, JongkuLee, Jeon-Kook
Issue Date
Dec-2010
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.97, no.23, pp 1 - 3
Pages
3
Indexed
SCI
SCIE
SCOPUS
Journal Title
Applied Physics Letters
Volume
97
Number
23
Start Page
1
End Page
3
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173418
DOI
10.1063/1.3525710
ISSN
0003-6951
1077-3118
Abstract
Metallic nanostructures that act as electrical switches between bistable resistance states are created electrically in an insulating amorphous niobium oxide thin film. The physical formation of the metallic nanostructures are probed using in situ focused ion beam scanning electron microscopy equipped with a current-voltage measurement system. While the electroforming process changes the film, dramatically inducing metallic nanochannels across it, significant changes in the film do not occur during repeated resistance switching afterward. A qualitative resistive switching model is proposed taking into account the gradual forming process.
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