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Investigation of transparent conducting oxide/Si junction for the emitter wrap through solar cells
- Authors
- Song, J.-S.; Yang, J.-Y.; Lee, J.-S.; Hong, J.-P.; Ha, J.-H.
- Issue Date
- Nov-2010
- Citation
- Conference Record of the IEEE Photovoltaic Specialists Conference, pp 3611 - 3613
- Pages
- 3
- Indexed
- SCOPUS
- Start Page
- 3611
- End Page
- 3613
- ISSN
- 0160-8371
- Abstract
- We have investigated properties of ITO/Si with shallow doped emitter for the increasing fill factor of emitter wrap through (EWT) solar cells. The ITO is prepared by DC magnetron sputter on p-type mono-crystalline silicon substrate. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission length method (TLM). As an experimental result, the contact resistance and the series resistance of ITO/Si with shallow doped emitter were obtained 0.0705 Ωcm2 and 0.1821 Ω;cm2, respectively. As a result of analysis by the contact resistance for optimization of ITO layer, the fill factor of EWT solar cells expected to increase above 80%.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)