Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer
- Authors
- Song, Hooyoung; Suh, Jooyoung; Kim, Eun Kyu; Baik, Kwang Hyeon; Hwang, Sung-Min
- Issue Date
- Oct-2010
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- X-ray diffraction; Metal-organic chemical vapor deposition; Nitrides; Semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.312, no.21, pp.3122 - 3126
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 312
- Number
- 21
- Start Page
- 3122
- End Page
- 3126
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/173663
- DOI
- 10.1016/j.jcrysgro.2010.08.004
- ISSN
- 0022-0248
- Abstract
- Nonpolar (1 1-20) a-plane GaN films have been grown using the multi-buffer layer technique on (1-1 0 2) r-plane sapphire substrates. In order to obtain epitaxial a-plane GaN films, optimized growth condition of the multi-buffer layer was investigated using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy measurements. The experimental results showed that the growth conditions of nucleation layer and three-dimensional growth layer significantly affect the crystal quality of subsequently grown a-plane GaN films. At the optimized growth conditions, omega full-width at half maximum values of (11-20) X-ray rocking curve along c- and m-axes were 430 and 530 arcsec, respectively. From the results of transmission electron microscopy, it was suggested that the high crystal quality of the a-plane GaN film can be obtained from dislocation bending and annihilation by controlling of the island growth mode.
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