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Charge trapping in hybrid electroluminescence device containing CdSe/ZnS quantum dots embedded in a conducting poly(N-vinylcarbozole) layer
- Authors
- Li, Fushan; Guo, Tailiang; Kim, Taewhan
- Issue Date
- Aug-2010
- Publisher
- AMER INST PHYSICS
- Keywords
- cadmium compounds; conducting polymers; electroluminescence; electroluminescent devices; electron-hole recombination; hole traps; II-VI semiconductors; negative resistance; semiconductor quantum dots; wide band gap semiconductors; zinc compounds
- Citation
- APPLIED PHYSICS LETTERS, v.97, no.6, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 97
- Number
- 6
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
- Abstract
- Charge transport in a multilayer hybrid electroluminescence (EL) device containing CdSe/ZnS quantum dots (QDs) embedded in hole-transporting poly(N-vinylcarbozole) (PVK) layer was investigated. The current-voltage (I-V) curve exhibited resistive transition at low bias voltage and a negative differential resistance region with increase in bias voltage, which can be explained in terms of a two-step charge transport process, i.e., holes trapping and the following hole-electron recombination in CdSe/ZnS QDs embedded in PVK layer. EL spectra showed that the recombination center would be restricted to CdSe/ZnS QDs at high bias voltage, which is in well agreement with the I-V results.
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