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Ceria CMP Slurry for the Construction of Floating Gates in MLC NAND Flash Memory below 51 nm
- Authors
- Kim, Ye-Hwan; Kim, Jong-Woo; Kim, Sang-Kyun; Paik, Ungyu
- Issue Date
- Jul-2010
- Publisher
- Electrochemical Society, Inc.
- Keywords
- adsorption; cerium compounds; chemical mechanical polishing; elemental semiconductors; flash memories; logic gates; passivation; planarisation; silicon; slurries
- Citation
- Electrochemical and Solid-State Letters, v.13, no.10, pp H339 - H342
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Electrochemical and Solid-State Letters
- Volume
- 13
- Number
- 10
- Start Page
- H339
- End Page
- H342
- ISSN
- 1099-0062
1944-8775
- Abstract
- A ceria slurry, which is capable of high removal selectivity between silicon oxide and poly-Si, in the chemical mechanical planarization (CMP) process was investigated for the construction of poly-Si gates of a multilevel cell (MLC) NAND flash memory below 51 nm. Anionic phosphate fluorosurfactant was incorporated into the ceria slurry for use as a passivation agent to suppress poly-Si removal. The ceria slurry with fluorosurfactant showed high silicon oxide-to-poly-Si removal selectivity (295:1), resulting from the passivation layers on the poly-Si due to the selective adsorption of the fluorosurfactant. The selective adsorption behavior of the fluorosurfactant can be explained by the difference in surface characteristics between the oxide and the poly-Si, which was supported by the experimental results.
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Related Researcher
- Paik, Ungyu
- COLLEGE OF ENGINEERING (DEPARTMENT OF ENERGY ENGINEERING)