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CMOS symmetric trace differential stacked spiral inductor
- Issue Date
- Jul-2010
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.46, no.14, pp.1005 - U70
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 46
- Number
- 14
- Start Page
- 1005
- End Page
- U70
- ISSN
- 0013-5194
- Abstract
- A miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) has been implemented using standard 0.18 mu m CMOS technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency (f(sr)) and quality factor (Q) of the SDSSI were compared to a conventional differential stacked spiral inductor (DSSI). The f(sr) of the SDSSI was nearly 2.5 times higher than that of the DSSI, and the Q value of the SDSSI was also enhanced.
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Related Researcher
- Kim, Hyeongdong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)