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Roles of interfacial TiOxN1-x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks
- Authors
- Kwak, June Sik; Do, Young Ho; Bae, Yoon Cheol; Im, Hyun Sik; Yoo, Jong Hee; Sung, Min Gyu; Hwang, Yun Taek; Hong, Jin Pyo
- Issue Date
- May-2010
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.96, no.22, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 96
- Number
- 22
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Reversible counter-clockwise and clockwise resistive switching in a TiN/TiO2/TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO2 layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiOxN1-x layer between the TiO2 and TiN bottom electrode. The TiOxN1- x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)