Coupling Top- and Bottom-Gate ZnO Thin Film Transistors for Low Voltage, High Gain Inverter
- Authors
- Oh, Min Suk; Han, Jeong In; Lee, Kimoon; Lee, Byoung H.; Sung, Myung M.; Im, Seongil
- Issue Date
- Mar-2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.6, pp.II194 - II196
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 6
- Start Page
- II194
- End Page
- II196
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175318
- DOI
- 10.1149/1.3373521
- ISSN
- 1099-0062
- Abstract
- We reported on the fabrication of depletion-load-type ZnO thin film transistor (TFT) inverters coupling top-and bottom-gate TFTs that have 20 nm thin Al2O3 dielectrics grown by atomic layer deposition. Because the top-gate ZnO TFT showed a lower field-effect mobility of 0.1 cm(2)/V s than that of the bottom-gate device (2.4 cm(2)/V s), we used the top-and bottom-gate structures as driver and load transistors, respectively, to adjust the transition voltage of the inverter with an identical width/length dimension for both TFTs. Our ZnO inverter demonstrated an excellent voltage gain of similar to 41 at a low supply voltage of 5 V.
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