Improved field emission properties of CdS deposited single walled carbon nanotube emitter
- Authors
- Lee, Jungwoo; Lee, Wonjoo; Park, Taehee; Lee, Jaeseung; Park, Eunkyung; Lee, Donghwan; Lee, Jongtaek; Yi, Whikun
- Issue Date
- Mar-2010
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- cadmium compounds; carbon nanotubes; field emission; II-VI semiconductors; nanoparticles; semiconductor thin films
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.28, no.2, pp.C2B43 - C2B46
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 28
- Number
- 2
- Start Page
- C2B43
- End Page
- C2B46
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175333
- DOI
- 10.1116/1.3360900
- ISSN
- 1071-1023
- Abstract
- A film of shaped CdS nanoparticle deposited single walled carbon nanotubes (CdS-SCWNTs) on silicon wafer is successfully fabricated by the method of layer-by-layer deposition cycle. The field emission (FE) properties of CdS-SWCNTs film are investigated for the first time. The film of CdS-SWCNTs exhibits better FE properties, a lower turn-on field, and a higher field enhancement factor than that of the film of pristine SWCNTs, for which the physical and chemical properties of the CdS nanoparticle have played an important role. As a II-VI semiconductor compound, CdS has attracted considerable interest in optoelectronic application because of its relatively low electron affinity, high chemical inertness, and sputter resistance.
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