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Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer
- Issue Date
- Mar-2010
- Publisher
- American Institute of Physics
- Keywords
- cadmium compounds; elemental semiconductors; II-VI semiconductors; nanoparticles; polymers; random-access storage; silicon
- Citation
- Applied Physics Letters, v.96, no.12, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 96
- Number
- 12
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) (PVK) layer to investigate the variations in the electrical properties due to a CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVK layer/p-Si devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/p-Si devices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence of the CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that the retention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger than that for devices fabricated utilizing CdTe nanoparticles.
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