Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization
- Authors
- Lee, Geon Joon; Lee, Kyoung-Min; Hong, Wan-Shick; Kim, Sung Soo; Cheong, Hyeonsik; Yoon, Chong Seung; Lee, YoungPak
- Issue Date
- Jan-2010
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.1, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 49
- Number
- 1
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175560
- DOI
- 10.1143/JJAP.49.015502
- ISSN
- 0021-4922
- Abstract
- Nanocrystalline silicon gratings were fabricated by applying both femtosecond-laser-interference crystallization and post thermal annealing to amorphous silicon (a-Si) nanoclusters embedded within a silicon nitride matrix. Catalytic chemical vapor deposition was used to fabricate the embedded a-Si nanoclusters, and the formation of a-Si nanoclusters was confirmed by photoluminescence spectroscopy. The femtosecond laser interference technique was employed to produce a seed pattern for the spatially-selected crystallization of a-Si nanoclusters. Micro-Raman spectroscopy and selected-area electron diffraction, together with high-resolution transmission-electron microscopy, show that nanocrystalline silicon gratings were formed through an amorphous-to-crystalline transformation with femtosecond laser pulses, and that the degree of crystallization was enhanced by applying post thermal annealing to the seed gratings.
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