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p-GaN Activation by Electrochemical Potentiostatic Method
- Authors
- Lee, Hak Hyung; Hong, Gi Cheol; Kim, Bong Jun; Sadasivam, Karthikeyan Giri; Lee, June Key; Ryu, Sang-Wan; Son, Sung Jin; Kwon, Kwang-Woo; Kim, Young-Ho
- Issue Date
- Jan-2010
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.4, pp.H122 - H124
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 13
- Number
- 4
- Start Page
- H122
- End Page
- H124
- ISSN
- 1099-0062
- Abstract
- An electrochemical potentiostatic activation method was examined to enhance the hole concentration of p-type GaN epitaxial layer. The hole concentration was more than double, with a mobility of 9-11 cm(2)/V s after an electric voltage was applied. At an optimal applied voltage of 3 V, the hole concentration was enhanced about 2.4 times from 1.9 x 10(17) to 4.5 x 10(17) cm(-3). The p-GaN films dissolved in the KOH solution at high applied voltages above 9 V. The secondary-ion mass spectrometry analysis indicated that nearly 70% of the hydrogen atoms were removed by this activation method.
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