Dependence of current bistabilities on trap density and maximum applied voltage in organic bistable devices
- Authors
- Jung, Jae Hun; Kim, Tae Whan
- Issue Date
- Jan-2010
- Publisher
- ELSEVIER
- Keywords
- Current bistability; Trap density; Maximum applied voltage; Organic bistable devices
- Citation
- CURRENT APPLIED PHYSICS, v.10, no.1, pp.E42 - E45
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 10
- Number
- 1
- Start Page
- E42
- End Page
- E45
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175579
- DOI
- 10.1016/j.cap.2009.12.010
- ISSN
- 1567-1739
- Abstract
- The current-voltage (I-V) curves and the captured electron density with various trap densities and maximum applied voltages of organic bistable devices (OBDs) were calculated by using the Shockley-Reed trapping rate model and taking into account the thermionic emission model. The current bistabilities in the I-V curves for OBDs were attributed to captured electrons in the traps near the heterointerface between the electrode and the organic layer. The on/off ratio and the width of the memory window of the I-V curves for OBDs gradually increased with increasing trap density in the organic layer and maximum applied voltage. The maximum increase of the on/off ratio and the width of the memory window of the I-V curve for OBDs became saturated to the specific values, regardless of the continuous increase of the trap density and the maximum applied voltage.
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