Electrical Width Determination of Silicon Nanowires Prepared by Using the Top-Down Method
- Authors
- Lee, Seong Jae
- Issue Date
- Dec-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Low-dimensional transport; Semiconductor nanowire
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp.2486 - 2490
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 6
- Start Page
- 2486
- End Page
- 2490
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175743
- DOI
- 10.3938/jkps.55.2486
- ISSN
- 0374-4884
- Abstract
- High-aspect-ratio nanowires of various widths and lengths (105 nm similar to 20 mu m and 2 similar to 20 mu m, respectively), but of fixed thickness (40 nm), were prepared by using the top-down method, and their resistances were measured in the two-terminal configuration. By taking into account the series resistance corresponding to the trapezoidal section of the channel connecting a nanowire to a wider electrode region, we obtained a sheet resistance and a source/drain resistance of 16.81 and 11.17 k Omega, respectively, in a consistent manner. We also determined the effective electrical widths, which are different from the physical widths by as much as 40 nm for a 105-nm-wide nanowire, and found a linear dependence of the surface depletion layer's thickness at the side walls on their physical width, which was attributed to structural damage that occurred during the plasma etch process.
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