Physical Properties of Co-Mn-Si Films on SOI Prepared by Using a Silicidation Process
- Authors
- Jang, Moongyu; Kim, Jin Bae; Eom, Taewoon; Van Dai, Nguyen; Lee, Young-Pak; Lee, Seongjae
- Issue Date
- Dec-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Half-metal; Ferromagnetism; Magnetotransport
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp.2456 - 2459
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 6
- Start Page
- 2456
- End Page
- 2459
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/175744
- DOI
- 10.3938/jkps.55.2456
- ISSN
- 0374-4884
- Abstract
- We have measured the structural, magnetic, and transport properties of Co-Mn-Si films prepared on SOI wafers by using two different silicidation processes: rapid thermal annealing (RTA) at 650 degrees C for 3 and 5 min. X-ray analysis revealed that the RTA at 650 degrees C for 5 min produced a single-phase Co2MnSi film while the RTA at 650 degrees C for 3 min produced a multi-phase film composed mainly of COSi2 and Co2MnSi. For the single-phase Co2MnSi films, we obtained a saturated magnetization of 4.1 mu(B)/f.u. and a residual resistivity of 8.5 mu Omega.cm at 4.2 K, which are close to the values for single-crystalline Co2MnSi. Also. the absence of low-field magnetoresistance (MR) for the single-phase film, in contrast to the hysteretic MR for the multi-phase film, suggests that our single-phase Co2MnSi film has a single-crystal-like quality.
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