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(111) Faceted Ceria and Its Influence on STI CMP for Memory Devices Below 50 nm
- Issue Date
- Oct-2009
- Publisher
- Electrochemical Society, Inc.
- Citation
- Electrochemical and Solid-State Letters, v.12, no.12, pp H449 - H452
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electrochemical and Solid-State Letters
- Volume
- 12
- Number
- 12
- Start Page
- H449
- End Page
- H452
- ISSN
- 1099-0062
- Abstract
- We investigated the effects of (111) faceted ceria nanoparticles on the removal rate of oxide films in shallow trench isolation (STI) chemical mechanical planarization (CMP). The X-ray diffraction peak ratio of (111) to (200) for the (111) faceted ceria particles synthesized by a flash-creation method was 4.08, while the ratio for polyhedral ceria synthesized by a solid-state displacement reaction was 2.65. The highest surface density of atoms in the (111) plane led to an increase in removal rates. Faceted ceria slurry yielded a higher oxide removal rate and greater selectivity than the polyhedral ceria slurry in STI CMP evaluation.
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Related Researcher
- Paik, Ungyu
- COLLEGE OF ENGINEERING (DEPARTMENT OF ENERGY ENGINEERING)