Effects of defects on the morphologies of GaN nanorods grown on Si (111) substrates
- Authors
- Lee, Kyu Hyung; Lee, Jeong Yong; Kwon, Young Hae; Kang, Tae Won; You, Joo Hyung; Lee, Dea Uk; Kim, Taewhan
- Issue Date
- Oct-2009
- Publisher
- SPRINGER HEIDELBERG
- Citation
- JOURNAL OF MATERIALS RESEARCH, v.24, no.10, pp.3032 - 3037
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS RESEARCH
- Volume
- 24
- Number
- 10
- Start Page
- 3032
- End Page
- 3037
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176092
- DOI
- 10.1557/JMR.2009.0391
- ISSN
- 0884-2914
- Abstract
- Scanning electron microscopy and transmission electron microscopy images and selected area electron diffraction pattern showed that the one-dimensional GaN nanorods with [0001]-oriented single-crystalline wurzite structures were formed on Si (111) substrates by using hydride vapor-phase epitaxy without a catalyst. Although some stacking faults and inversion domain boundaries existed in the GaN nanorods, few other defects such as threading dislocations were observed. The fort-nation of the facet plane in the N-polar region of the GaN nanorod containing an inversion domain boundary originated from the slow growth rate, followed by the lateral adatom diffusion from the Ga-polar region to reduce the length difference.
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