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Charging Effect of WSi2 Nano-particles Embedded in SiO2 Layers
- Authors
- Seo, Ki Bong; Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu
- Issue Date
- Sep-2009
- Publisher
- 한국물리학회
- Keywords
- WSi2; Nano-particles; Nano-floating gate memory; Carrier charging effect
- Citation
- Journal of the Korean Physical Society, v.55, no.3, pp 1201 - 1204
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 55
- Number
- 3
- Start Page
- 1201
- End Page
- 1204
- ISSN
- 0374-4884
1976-8524
- Abstract
- A nano-floating gate capacitor with WSi2 nano-particles embedded in a SiO2 layer was fabricated. The WSi2 nano-particles were formed from a thin WSi2 layer during a rapid thermal annealing process, and they had a spherical shape with all average diameter of 2.5 nm. The electrical properties of the nano-floating gate capacitor with WSi2 nano-particles embedded in SiO2 dielectrics Were characterized by using capacitance-voltage measurements. Then, a flat-band voltage shift of up to 3.8 V due to carrier charging of the WSi2 nano-particles appeared when the gate voltage was swept front -7 V to +7 V and from +7 V to -7 V, which showed that; the WSi2 nano-particles could be applied to nonvolatile memory devices.
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