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Charge trap memory characteristics of AlOx shell-Al core nanoparticles embedded in HfO2 gate oxide matrix
- Authors
- Lee, Jun Seok; Yang, Jung Yup; Hong, Jin Pyo
- Issue Date
- Aug-2009
- Publisher
- AIP Publishing
- Keywords
- aluminium; aluminium compounds; electron-hole recombination; hafnium compounds; interface states; MIS structures; nanoparticles; transmission electron microscopy; tunnelling
- Citation
- APPLIED PHYSICS LETTERS, v.95, no.5, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 95
- Number
- 5
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
- Abstract
- The memory behavior of natively oxidized AlOx shell-Al nanoparticles (NPs) in a metal oxide semiconductor (MOS) structure was investigated. Transmission electron microscopy images clearly demonstrate the formation of an AlOx shell (thicknesses of 1-1.5 nm), surrounding Al (sizes of 5-7 nm) core NPs in the MOS structure. Electrical measurements exhibited a memory window of 3.6 V, together with a promising charge retention time of about 10 years. A possible band model needed for enhanced retention characteristics was given by considering the electron/hole barrier width and the additional interface states through the AlOx shell as a method of tunneling barrier engineering.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)