Cell characteristics of a multiple alloy nano-dots memory structure
- Authors
- Bea, Ji Chel; Song, Yun Heub; Lee, Kang-Wook; Lee, Gae-Hun; Tanaka, Tetsu; Koyanagi, Mitsumasa
- Issue Date
- Aug-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.8, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 24
- Number
- 8
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176442
- DOI
- 10.1088/0268-1242/24/8/085013
- ISSN
- 0268-1242
- Abstract
- A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (similar to 5.2 eV) and extremely high dot density (similar to 1.2 x 10(13) cm(-2)) was fabricated. Its structural effect for multiple layers was evaluated and compared to the one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with two to four multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN) tunneling could be a candidate structure for future flash memory.
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