Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2
- Authors
- Lee, Tae Hee; Lee, Dong Uk; Kim, Eun Kyu; Shin, Jin-Wook; Cho, Won-Ju
- Issue Date
- Jul-2009
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Nonvolatile memory; SiC; Nano-particles; Nano-floating gate memory
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.46, no.1-2, pp.182 - 187
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 46
- Number
- 1-2
- Start Page
- 182
- End Page
- 187
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176524
- DOI
- 10.1016/j.spmi.2008.12.018
- ISSN
- 0749-6036
- Abstract
- Nonvolatile memory device with SiC nano-particles formed in SiO2 was fabricated and its electrical properties were evaluated. The SiC and SiO2 thin layer were deposited by radio-frequency magnetron sputtering in the argon gas ambient. The SiC nanoparticles were formed after post thermal annealing at 900 degrees C for 3 min, and then their average size appeared at about 10 nm and was distributed between tunnel oxide and control oxide layers. The flat-band voltage shift in a gate capacitor structure with SiC nanoparticles appeared at about 5.1 V when the induced gate voltage was swept from +/-14 V. Also, the memory window of nonvolatile memory devices to define write and erase conditions were about 2.7 V during the operations at +/-12 V for 1 s. According to these write and erase conditions, it was maintained at about 1.2 V after 10(4) s at the charge-retention characteristics.
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