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Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications
- Issue Date
- Jul-2009
- Publisher
- Pergamon Press Ltd.
- Keywords
- CsI(Tl); PIN diode; Photon counting; Gamma rays; NDT
- Citation
- Applied Radiation and Isotopes, v.67, no.7-8, pp 1463 - 1465
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Radiation and Isotopes
- Volume
- 67
- Number
- 7-8
- Start Page
- 1463
- End Page
- 1465
- ISSN
- 0969-8043
1872-9800
- Abstract
- CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11 x 11 x 21 mm(3) were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.
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Related Researcher
- Kim, Yong Kyun
- COLLEGE OF ENGINEERING (DEPARTMENT OF NUCLEAR ENGINEERING)