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Carrier transport mechanisms in nonvolatile memory devices fabricated utilizing multiwalled carbon nanotubes embedded in a poly-4-vinyl-phenol layer
- Authors
- Kim, Won Tae; Jung, Jae Hun; Kim, Tae Whan
- Issue Date
- Jul-2009
- Publisher
- American Institute of Physics
- Keywords
- aluminium; carbon nanotubes; carrier mobility; nanocomposites; organic-inorganic hybrid materials; random-access storage; silicon; transmission electron microscopy
- Citation
- Applied Physics Letters, v.95, no.2, pp 1 - 3
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 95
- Number
- 2
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Transmission electron microscopy images showed that multiwalled carbon nanotubes (MWCNTs) were dispersed in a poly-4-vinyl-phenol (PVP) layer. Capacitance-voltage (C-V) measurements on the Al/MWCNTs embedded in a PVP layer/p-Si (100) devices at 300 K showed a clockwise hysteresis with a large flatband voltage shift due to the existence of the MWCNTs. The magnitude of the flatband voltage shift in the C-V curve for the devices increased with increasing MWCNT concentration. The carrier transport mechanisms for the writing and the erasing processes for the Al/MWCNTs embedded in PVP/p-Si devices are described on the basis of the C-V results.
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