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Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc
- Authors
- Lee, Byoung H.; Hwang, Jae K.; Nam, Jae W.; Lee, Song U.; Kim, Jun T.; Koo, Sang-M.; Baunemann, A.; Fischer, Roland A.; Sung, Myung M.
- Issue Date
- Jun-2009
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- atomic layer deposition; copper; surface chemistry; thin films; zinc
- Citation
- ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.48, no.25, pp.4536 - 4539
- Indexed
- SCIE
SCOPUS
- Journal Title
- ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Volume
- 48
- Number
- 25
- Start Page
- 4536
- End Page
- 4539
- ISSN
- 1433-7851
- Abstract
- A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 °C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH2NMe 2)2] with Et2Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 μm) were fabricated.
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Related Researcher
- Koo, Sang Man
- COLLEGE OF ENGINEERING (DEPARTMENT OF CHEMICAL ENGINEERING)