Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties
DC Field | Value | Language |
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dc.contributor.author | Shin, Il-Jae | - |
dc.contributor.author | Min, Byoung-Chul | - |
dc.contributor.author | Hong, Jin-Pyo | - |
dc.contributor.author | Shin, Kyung-Ho | - |
dc.date.accessioned | 2022-12-20T21:58:49Z | - |
dc.date.available | 2022-12-20T21:58:49Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-06 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176716 | - |
dc.description.abstract | We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with x-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin-Pyo | - |
dc.identifier.doi | 10.1109/TMAG.2009.2018585 | - |
dc.identifier.scopusid | 2-s2.0-66549112924 | - |
dc.identifier.wosid | 000266329800011 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2393 - 2395 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.volume | 45 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2393 | - |
dc.citation.endPage | 2395 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | COFEB | - |
dc.subject.keywordAuthor | Magnetic tunnel junction | - |
dc.subject.keywordAuthor | MgO | - |
dc.subject.keywordAuthor | rf sputtering | - |
dc.subject.keywordAuthor | tunnel magnetoresistance | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/4957752 | - |
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