Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties
- Authors
- Shin, Il-Jae; Min, Byoung-Chul; Hong, Jin-Pyo; Shin, Kyung-Ho
- Issue Date
- Jun-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Magnetic tunnel junction; MgO; rf sputtering; tunnel magnetoresistance
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2393 - 2395
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 45
- Number
- 6
- Start Page
- 2393
- End Page
- 2395
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176716
- DOI
- 10.1109/TMAG.2009.2018585
- ISSN
- 0018-9464
- Abstract
- We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with x-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling.
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