Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Jung-Hoon | - |
dc.contributor.author | Sheng, Jiazhen | - |
dc.contributor.author | An, Hyesung | - |
dc.contributor.author | Hong, TaeHyun | - |
dc.contributor.author | Kim, Hyun You | - |
dc.contributor.author | Lee, HyunKyung | - |
dc.contributor.author | Seok, Jang Hyeon | - |
dc.contributor.author | Park, Jung Woo | - |
dc.contributor.author | Lim, Jun Hyung | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-07-30T04:52:30Z | - |
dc.date.available | 2021-07-30T04:52:30Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1768 | - |
dc.description.abstract | Indium oxide (In2O3) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid type indium complex precursor (InCH3)(3)[CH(3)OCH(2)CH(2)NHtBu]). In2O3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (similar to 0.35 angstrom per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 degrees C on the microstructure and chemical and physical properties of In2O3 films. Interestingly, the In2O3 film had a clear rhombohedral structure at deposition temperatures from 100 to 150 degrees C. For the 200 and 250 degrees C deposition temperatures, the phase of In2O3 transformed to a cubic structure. The crystalline structure of the In2O3 film was extremely sensitive to deposition temperatures, giving rise to a wide range of tunable physical and electrical properties. Based on a comparison of comprehensive structural transmission electron microscopy analysis, density functional theory calculations, and systematic experimental measurements, we explored the possibility of TFTs with an ALD-processed In2O3 layer as a semiconductor. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1021/acs.chemmater.0c02306 | - |
dc.identifier.scopusid | 2-s2.0-85092047562 | - |
dc.identifier.wosid | 000569075300030 | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.32, no.17, pp.7397 - 7403 | - |
dc.relation.isPartOf | CHEMISTRY OF MATERIALS | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 7397 | - |
dc.citation.endPage | 7403 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CYCLOPENTADIENYL INDIUM | - |
dc.subject.keywordPlus | IN2O3 | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | H2O | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acs.chemmater.0c02306 | - |
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