Metastable Rhombohedral Phase Transition of Semiconducting Indium Oxide Controlled by Thermal Atomic Layer Deposition
- Authors
- Lee, Jung-Hoon; Sheng, Jiazhen; An, Hyesung; Hong, TaeHyun; Kim, Hyun You; Lee, HyunKyung; Seok, Jang Hyeon; Park, Jung Woo; Lim, Jun Hyung; Park, Jin-Seong
- Issue Date
- Sep-2020
- Publisher
- AMER CHEMICAL SOC
- Citation
- CHEMISTRY OF MATERIALS, v.32, no.17, pp.7397 - 7403
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMISTRY OF MATERIALS
- Volume
- 32
- Number
- 17
- Start Page
- 7397
- End Page
- 7403
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1768
- DOI
- 10.1021/acs.chemmater.0c02306
- ISSN
- 0897-4756
- Abstract
- Indium oxide (In2O3) thin films were deposited via thermal atomic layer deposition (ALD) to exploit their potential as semiconductors in thin-film transistors (TFTs), using a new liquid type indium complex precursor (InCH3)(3)[CH(3)OCH(2)CH(2)NHtBu]). In2O3 films were deposited successfully at lower temperatures and exhibited a satisfactory growth rate (similar to 0.35 angstrom per cycle). In addition, we investigated the effect of deposition temperature from 100 to 250 degrees C on the microstructure and chemical and physical properties of In2O3 films. Interestingly, the In2O3 film had a clear rhombohedral structure at deposition temperatures from 100 to 150 degrees C. For the 200 and 250 degrees C deposition temperatures, the phase of In2O3 transformed to a cubic structure. The crystalline structure of the In2O3 film was extremely sensitive to deposition temperatures, giving rise to a wide range of tunable physical and electrical properties. Based on a comparison of comprehensive structural transmission electron microscopy analysis, density functional theory calculations, and systematic experimental measurements, we explored the possibility of TFTs with an ALD-processed In2O3 layer as a semiconductor.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1768)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.