Multi-layered SiC nanocrystals embedded in SiO2 layer for nonvolatile memory application

Abstract

A nonvolatile memory device with the multi-layered SiC nanocrystals embedded in the SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The multi-layered SiC nanocrystals were formed by using post thermal annealing process. The transmission electron microscope analysis showed that the multi-layered SiC nanocrystals are created between the tunnel and the control oxide layers. The average size and density of the SiC nanocrystals were approximately 5 nm and 2x1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layered of SiC nanocrystals was about 2.7 V, and then it was maintained around 1.1 V after 105 sec.