The impact of carrier gas on the physical and electrical properties of indium oxide layers grown by mist-CVD

Abstract

Indium oxide (InOx) thin films were synthesized by mist chemical vapor deposition (mist-CVD), using oxygen (O-2) and nitrogen (N-2) carrier gases. Relatively high growth rates are achieved with oxygen, resulting in high refractive index InOx layers. In addition, super charge transport properties are observed in InOx films grown with oxygen, as compared with those grown using nitrogen carrier gas. Also, highly-crystalline InOx layers are formed when oxygen gas is used, with nearly perfect stoichiometry and considerably low carbon content. It is speculated that the oxygen carrier stimulates the decomposition and chemical reaction of indium precursors to form indium-oxygen bonds readily, thus reducing the amount of carbon contamination and defects related to oxygen vacant sites.