Constraints of the Corning on Plugs of W Film in W Chemical Mechanical Planarization
- Authors
- Kim, Ye-Hwan; Hong, Gisik; Kim, Jong-Woo; Kim, Sang-Kyun; Kim, Namsoo; Yi, Dong Kee; Paik, Ungyu
- Issue Date
- Apr-2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- adsorbed layers; chemical mechanical polishing; chemisorbed layers; corrosion inhibitors; etching; metallic thin films; passivation; planarisation; polymers; tungsten
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.6, pp.H218 - H221
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 12
- Number
- 6
- Start Page
- H218
- End Page
- H221
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176962
- DOI
- 10.1149/1.3109981
- ISSN
- 1099-0062
- Abstract
- The constraints of corning on the W plug in W chemical mechanical planarization (CMP) were investigated by controlling the corrosion behavior and static etch rate of the W film. Poly(acrylic amide) (PAM) was used as an inhibitor to decrease the static etch rate of the W film. The interaction between PAM and the surface of the W film was determined by potentiostatic measurement using a potentiometer and by force measurement using an atomic force microscope (AFM). AFM results revealed that the adlayer of PAM formed on the W film, which prevented the oxidation of the W film. Consequently the addition of PAM suppressed the corning defect on the W plug in a W CMP test that used patterned wafers.
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