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Constraints of the Corning on Plugs of W Film in W Chemical Mechanical Planarization

Authors
Kim, Ye-HwanHong, GisikKim, Jong-WooKim, Sang-KyunKim, NamsooYi, Dong KeePaik, Ungyu
Issue Date
Apr-2009
Publisher
ELECTROCHEMICAL SOC INC
Keywords
adsorbed layers; chemical mechanical polishing; chemisorbed layers; corrosion inhibitors; etching; metallic thin films; passivation; planarisation; polymers; tungsten
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.6, pp.H218 - H221
Indexed
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
12
Number
6
Start Page
H218
End Page
H221
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176962
DOI
10.1149/1.3109981
ISSN
1099-0062
Abstract
The constraints of corning on the W plug in W chemical mechanical planarization (CMP) were investigated by controlling the corrosion behavior and static etch rate of the W film. Poly(acrylic amide) (PAM) was used as an inhibitor to decrease the static etch rate of the W film. The interaction between PAM and the surface of the W film was determined by potentiostatic measurement using a potentiometer and by force measurement using an atomic force microscope (AFM). AFM results revealed that the adlayer of PAM formed on the W film, which prevented the oxidation of the W film. Consequently the addition of PAM suppressed the corning defect on the W plug in a W CMP test that used patterned wafers.
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