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Electrical Characteristics of Organic Field Effect Transistor Formed by Gas Treatment of High-k Al2O3 at Low Temperature
- Authors
- Lee, Sunwoo; Yoon, Seungki; Park, In-Sung; Ahn, Jinho
- Issue Date
- Apr-2009
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v.48, no.4, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 48
- Number
- 4
- Start Page
- 1
- End Page
- 4
- ISSN
- 0021-4922
1347-4065
- Abstract
- We studied the electrical characteristics of an organic field effect transistor (OFET) formed by the hydrogen (H-2) and nitrogen (N-2) mixed gas treatment of a gate dielectric layer. We also investigated how device mobility is related to the length and width variations of the channel. Aluminum oxide (Al2O3) was used as the gate dielectric layer. After the treatment, the mobility and subthreshold swing were observed to be significantly improved by the decreased hole carrier localization at the interfacial layer between the gate oxide and pentacene channel layers. H-2 gas plays an important role in removing the defects of the gate oxide layer at temperatures below 100 degrees C. (C) 2009 The Japan Society of Applied Physics
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)