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Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film

Authors
Choi, JoonhyukSong, JaeHoonJung, KyoohoKim, YongminIm, HyunsikJung, WoongKim, HyungsangDo, Young HoKwak, June SikHong, Jinpyo
Issue Date
Apr-2009
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.20, no.17, pp.1 - 5
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
20
Number
17
Start Page
1
End Page
5
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177039
DOI
10.1088/0957-4484/20/17/175704
ISSN
0957-4484
Abstract
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.
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