Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures
- Authors
- Kwon, Semyung; Bang, Seokhwan; Lee, Seungjun; Jeon, Sunyeol; Jeong, Wooho; Kim, Hyungchul; Gong, Su Cheol; Chang, Ho Jung; Park, Hyung-Ho; Jeon, Hyeongtag
- Issue Date
- Mar-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.3, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 24
- Number
- 3
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177142
- DOI
- 10.1088/0268-1242/24/3/035015
- ISSN
- 0268-1242
- Abstract
- ZnO thin films were deposited by atomic layer deposition (ALD) at various temperatures and the resulting electrical and chemical properties were examined. The fraction of O-H bonds in ZnO films decreased from 0.39 to 0.24 with increasing processing temperatures. The O/Zn ratio decreased from 0.90 at 70 degrees C to 0.78 at 130 degrees C. The carrier concentration and resistivity changed sharply with decreasing temperature. The ZnO thin film transistors (TFTs) were fabricated at processing temperatures of 70 to 130 degrees C and the electrical properties of the TFT were as follows: the field-effect mobility ranged from 8.82 x 10(-3) to 6.11 x 10(-3) cm(2) V-1 s(-1), the on/off current ratio ranged from 1.28 x 10(6) to 2.43 x 10(6), the threshold voltage ranged from -12.5 to 14.7 V and the subthreshold swing ranged from 1.21 to 24.1 V/decade. The electrical characteristics of the ZnO TFT were enhanced as the processing temperature decreased.
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