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Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer

Authors
Han, Won-KyuHwang, Gil-HoHong, Seok-JunKim, Soo-SeokYoon, Chong-SeungKwak, Noh-JungYeom, Seung-JinKim, Jae-HongKang, Sung-Goon
Issue Date
Mar-2009
Publisher
ELSEVIER
Keywords
Electrodeposition; Self-assembled monolayer (SAM); Cu seed layer; 60-nm trench pattern
Citation
MICROELECTRONIC ENGINEERING, v.86, no.3, pp.374 - 378
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
86
Number
3
Start Page
374
End Page
378
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177154
DOI
10.1016/j.mee.2008.11.024
ISSN
0167-9317
Abstract
We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO2 substrate modified with an organic self-assembled monolayer. The SiO2 substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO2 substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO2 substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 60-nm trench was demonstrated using an acid cupric sulfate electrolyte containing chloride, polyethylene glycol 4000 and bis(3-sulfopropyl)disulfide. The resulting electroplated Cu showed excellent filling capability and no voids or other defects were observed in a 60-nm trench pattern.
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