Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer
- Authors
- Han, Won-Kyu; Hwang, Gil-Ho; Hong, Seok-Jun; Kim, Soo-Seok; Yoon, Chong-Seung; Kwak, Noh-Jung; Yeom, Seung-Jin; Kim, Jae-Hong; Kang, Sung-Goon
- Issue Date
- Mar-2009
- Publisher
- ELSEVIER
- Keywords
- Electrodeposition; Self-assembled monolayer (SAM); Cu seed layer; 60-nm trench pattern
- Citation
- MICROELECTRONIC ENGINEERING, v.86, no.3, pp.374 - 378
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 86
- Number
- 3
- Start Page
- 374
- End Page
- 378
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177154
- DOI
- 10.1016/j.mee.2008.11.024
- ISSN
- 0167-9317
- Abstract
- We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO2 substrate modified with an organic self-assembled monolayer. The SiO2 substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO2 substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO2 substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 60-nm trench was demonstrated using an acid cupric sulfate electrolyte containing chloride, polyethylene glycol 4000 and bis(3-sulfopropyl)disulfide. The resulting electroplated Cu showed excellent filling capability and no voids or other defects were observed in a 60-nm trench pattern.
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