Interband transition energies and carrier distributions of CdxZn1-xTe/ZnTe quantum wires
- Authors
- You, Joo Hyung; Woo, Jun Taek; Kim, Tae Whan; Yoo, Keon Ho; Lee, Hong Seok; Park, Hong Lee
- Issue Date
- Mar-2009
- Publisher
- AIP Publishing
- Keywords
- atomic force microscopy; cadmium compounds; deformation; excitons; finite difference methods; ground states; II-VI semiconductors; photoluminescence; semiconductor quantum wires; wide band gap semiconductors; zinc compounds
- Citation
- JOURNAL OF APPLIED PHYSICS, v.105, no.6, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 105
- Number
- 6
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177196
- DOI
- 10.1063/1.3087785
- ISSN
- 0021-8979
- Abstract
- Interband transition energies and carrier distributions of the CdxZn1-xTe/ZnTe quantum wires (QWRs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the CdxZn1-xTe/ZnTe QWRs was modeled to be approximately a half-ellipsoidal cylinder on the basis of the atomic force microscopy image. The excitonic peak energies corresponding to the ground electronic subband and the ground heavy-hole band (E-1-HH1) at several temperatures, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with those corresponding to the (E-1-HH1) excitonic transition, as determined from the temperature-dependent photoluminescence spectra.
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