Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition
- Authors
- Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu
- Issue Date
- Feb-2009
- Publisher
- ELSEVIER SCI LTD
- Keywords
- ZnO; Diluted magnetic semiconductor; Defects; Pulsed laser deposition
- Citation
- MICROELECTRONICS JOURNAL, v.40, no.2, pp.283 - 285
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONICS JOURNAL
- Volume
- 40
- Number
- 2
- Start Page
- 283
- End Page
- 285
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177286
- DOI
- 10.1016/j.mejo.2008.07.050
- ISSN
- 0026-2692
- Abstract
- The structural, electrical and magnetic properties of Zn0.95Mn0.O-05 films grown by a pulsed laser deposition system were studied. An X-ray diffraction was tried to verify a crystal structure of the sample. A capacitance-voltage measurement showed that the Zn0.95Mn0.O-05 has electrical properties of an n-type semiconductor, and its carrier concentration appears 5 x 10(18) cm(-3). From a deep level transient spectroscopy measurement, an oxygen vacancy and a Mn-related electron trap in the Zn0.95Mn0.05O films were appeared as E-c-0.62 eV and E-c-0.13 eV, respectively. A magnetic hysteresis of ferromagnetic was measured in the Zn0.95Mn0.O-05 at temperature of 15 K. The hydrogen plasma-annealed sample had larger magnetization than non-annealed sample because of interstitially located hydrogen atoms-mediated double exchange interaction.
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