Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxy
- Authors
- Lee, Ki-Hyoung; Lee, Jeong Yong; Kwon, Yang Hae; Ryu, Sung Yoon; Kang, Tae Won; Yoo, Chan-Ho; Lee, Dea Uk; Kim, Tae Whan
- Issue Date
- Jan-2009
- Publisher
- ELSEVIER
- Keywords
- Nanostructures; Hydride vapor phase epitaxy; Nanomaterials; Semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.311, no.2, pp.244 - 248
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 311
- Number
- 2
- Start Page
- 244
- End Page
- 248
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177405
- DOI
- 10.1016/j.jcrysgro.2008.11.031
- ISSN
- 0022-0248
- Abstract
- X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (111) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {(1) over bar1 0 0}, {(1) over bar1 0 2}, and {(1) over bar 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.
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