Charging effect of In2O3 nano-particles embedded in polyimide layer for application as non-volatile nano-floating gate memory
- Authors
- Kim, Seon Pil; Lee, Tae Hee; Lee, Dong Uk; Kim, Eun Kyu; Koo, Hyun-Mo; Cho, Won-Ju; Kim, Young-Ho
- Issue Date
- Jan-2009
- Publisher
- ELSEVIER
- Keywords
- Nano-particle; Nano-floating gate memory; In2O3
- Citation
- CURRENT APPLIED PHYSICS, v.9, no.1, pp.S43 - S46
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 9
- Number
- 1
- Start Page
- S43
- End Page
- S46
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177421
- DOI
- 10.1016/j.cap.2008.08.019
- ISSN
- 1567-1739
- Abstract
- The memory charging effect of the nano-floating gate capacitor containing the In2O3 nano-particles embedded in polyimide layer was characterized. Self-assembled In2O3 nano-particles were created by chemical reaction between the polymer precursor and indium film, and then the particles size and density were about 7 nm and 5.8 x 10(11) cm(-2), respectively. From capacitance-voltage hysteresis originated from electrons charging in the In2O3 nano-particles through tunneling oxide from p-type Si wafer, the flat-band voltage shift was obtained up to about 3.4 V, when the sweeping gate voltage was from -6 to 6 V. The endurance ability of this capacitor showed up to 2 x 10(5) cycles during the programming at 5 V for 0.2 ms and erasing at -5 V for 1.8 ms processes.
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