Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors
- Authors
- Park, Won Il
- Issue Date
- Oct-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Silicon nanowires; Delta-doping; Field-effect transistors
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.4, pp.L1759 - L1763
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 4
- Start Page
- L1759
- End Page
- L1763
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177833
- DOI
- 10.3938/jkps.53.1759
- ISSN
- 0374-4884
- Abstract
- We report on complementary delta-doping (delta-doping) and the electrical transport properties in single-crystal silicon nanowires (SiNWs) synthesized by using chemical vapor deposition via a vapor-liquid-solid growth process. Self-limited delta-doping layers were formed on intrinsic SiNW surfaces with either phosphine (PH3) or diborane (B2H6) molecular precursors and were then capped with intrinsic Si shell layers. Gate-dependent transport measurements showed that these delta-doped SiNWs behaved as either p-type or n-type channels in field-effect transistors (FETs) with transconductances of 150 nS and 130 nS and carrier mobilities of 45 cm(2)/Vs and 40 cm(2)/VS for p-type and n-type SiNW FETs, respectively.
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