Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs

Abstract

The current flow mechanisms of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) are analyzed by incorporating experimental results with an analytical model. In our analysis, we find that the off-current is mainly attributed to the thermionic current component whereas the on-current is due to the tunneling current. Since the tunneling current component rapidly increases at voltage above the threshold voltage, a lower Schottky barrier height and a thinner gate oxide are essential features to achieve a higher drive current in SB-MOSFETs.